| PART |
Description |
Maker |
| HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM
512M; 100MHz LVTTL interface SDRAM
512M; 133MHz LVTTL interface SDRAM
|
Elpida Memory
|
| HM5225165B HM5225165B-75 HM5225165B-A6 HM5225165B- |
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank /16-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133 PC/100 SDRAM
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank /16-Mword 4-bit 4-bank PC/133, PC/100 SDRAM
|
ELPIDA[Elpida Memory]
|
| HM5225165B HM5225165B-75 HM5225165B-A6 HM5225165B- |
256M LVTTL interface SDRAM 133 MHz/100 MHz 4-Mword ?16-bit ?4-bank/8-Mword ?8-bit ?4-bank /16-Mword ?4-bit ?4-bank PC/133, PC/100 SDRAM
|
Elpida Memory
|
| HM5259165B HM5259165B-75 HM5259165B-A6 HM5259165BT |
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 】 16-bit 】 4-bank/16-Mword 】 8-bit 】 4-bank /32-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133, PC/100 SDRAM
|
ELPIDA[Elpida Memory]
|
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HM5212165F HM5212805FLTD-B60 |
128M LVTTL interface SDRAM(128M LVTTL 接口同步DRAM) 128MLVTTL接口的SDRAM28MLVTTL接口同步的DRAM
SYNCHRONOUS DRAM, PDSO54
|
Fairchild Semiconductor, Corp.
|
| EDS2532AABJ-75-E EDS2532AABJ-75L-E |
256M bits SDRAM (8M words 32 bits) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
256M bits SDRAM (8M words 32 bits) 256M位的SDRAM00万字32位）
256M bits SDRAM (8M words ?32 bits)
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| HM5212325FBPC HM5212325FBPC-B60 |
128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM
4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| K4S643232F-TL45 K4S643232F-TL55 K4S643232F-TL70 K4 |
IR LED 950NM 18 DEG DOUBLE END
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4S560432A K4S560432A-TC_L75 K4S560432A-TC_L80 K4S |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM16米x 4位4银行同步DRAM LVTTL
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM6米x 4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 |
16M x 16 SDRAM, LVTTL, 133MHz
256Mb E-die SDRAM Specification 54pin sTSOP-II
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
